Samsung: Layered communication technology enables increased capacity of DRAM chips

A new technology for communication layers in DRAM memories has been developed by Samsung that allows to increase the capacity of the chip.

The price of the RAM and SSDs They have dropped a lot in price and are now affordable. It is not only due to a stabilization of production, there is also the increase in layers and the number of bits per cell. Stacking the layers allows to develop more compact chips. Samsung has advanced in technology memory chip packaging.

Communication between the different stacked memory layers is also an important element. These pathways through silicon (TSV) allow the different layers to be joined with the PCB. To date, it was done through an interconnection system with wires. What Samsung has achieved is to improve the interconnection of the layers to obtain a simplified communication.

Samsung manages to improve memory connection paths

Something that the South Korean company has been developing for a long time is memory chip encapsulation technology. They have achieved that each of the layers can be connected directly to the PCB by means of paths through the silicon.

Thanks to this new technology, twelve DRAM chips (layers) drilled more than 60 times can be connected in the same package thickness of 000µm. Until now this was only possible in eight-layer structures. Samsung has managed to bring it to a 720-layer system, which is a breakthrough.

The big improvement is that the communication between the layers is shorter and therefore the communication latency is improved. Additionally more compact DRAM chips are achieved. Through this advance, Samsung will be able to develop 24GB DRAM chips, instead of the current 8GB.

All these technical advances in the end what they offer us are more capacity in much less space. In addition, these techniques allow significant cost savings and lower prices.