Samsung starts the production of eMRAM memories, which have the mission of replacing current RAM memories.
The price of RAM for months has been through the roof, although now it seems to be stabilizing. Although the DDR5 standard has already been announced, it looks like it could be the latest standard. As this happens, other memory chips are being developed that are more efficient and powerful. Samsung Electronics has just announced that it is starting production of eMRAM memories. These new memories are based on the 28nm FD-SOI lithography.
Samsung already begins to produce the revolutionary eMRAM memories
About MRAM memories we must say that they are a new type of non-volatile magnetic RAM that has been in development for years. Basically it is sought that the information is not erased when the RAM stops receiving voltage, as it happens today. This would be a great revolution, in which Intel is also working.
The solution developed by Samsung based on 28FDS offers significant improvements in power and speed, while reducing costs. This eMRAM does not need an erase cycle before writing new data. This allows the writing speed to be about a thousand times faster than eFlash. Additionally these new memories make use of lower voltages than Flash memories. They do not require power when they are off (without voltage), something that increases energy efficiency.
Additionally, these memories offer important advantages over current memories, such as 1ns latency, higher transfer speeds and greater resistance. These new eMRAMs arrive to replace the current RAM and Flash NAND memories, although they will take time to reach the market.
It should be noted that the first Samsung modules will have a fairly limited capacity. The Korean company has not provided further details on the modules it is starting to manufacture. It seems that initially it will work with 1GB modules for this 2019. Later, the eMRAM manufacturing process will be passed to 18FDS, as well as much more advanced FinFET nodes.
Source: Anandtech
